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As the industry transitions from FinFet devices to a nanosheet architecture, the limitations of current technologies, particularly in memory, have become apparent. The race to overcome these challenges has led researchers and industry leaders to investigate alternatives such as silicon carbide, graphene, gallium nitride, and other two-dimensional materials.

A New Contender: Indium Selenide

The recent discovery of Indium Selenide could represent a turning point. Its unique combination of ferroelectric and piezoelectric properties allows for innovative applications in information storage and processing. Essentially, this material can generate internal electrical fields and generate charge in response to mechanical stresses, potentially revolutionizing how data is written and stored.